发明授权
US08598005B2 Method and manufacture for embedded flash to achieve high quality spacers for core and high voltage devices and low temperature spacers for high performance logic devices
有权
用于嵌入式闪存的方法和制造，以实现用于高性能逻辑器件的核心和高电压器件以及低温间隔物的高质量间隔物
- 专利标题： Method and manufacture for embedded flash to achieve high quality spacers for core and high voltage devices and low temperature spacers for high performance logic devices
- 专利标题（中）： 用于嵌入式闪存的方法和制造，以实现用于高性能逻辑器件的核心和高电压器件以及低温间隔物的高质量间隔物
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申请号： US13185390申请日： 2011-07-18
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公开(公告)号： US08598005B2公开(公告)日： 2013-12-03
- 发明人: Simon Siu-Sing Chan , Hidehiko Shiraiwa , Chuan Lin , Lei Xue , Kenichi Ohtsuka , Angela Tai Hui
- 申请人： Simon Siu-Sing Chan , Hidehiko Shiraiwa , Chuan Lin , Lei Xue , Kenichi Ohtsuka , Angela Tai Hui
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号： H01L29/772
- IPC分类号： H01L29/772
摘要：
A method and manufacture for memory device fabrication is provided. Spacer formation and junction formation is performed on both: a memory cell region in a core section of a memory device in fabrication, and a high-voltage device region in a periphery section of the memory device in fabrication. The spacer formation and junction formation on both the memory cell region and the high-voltage device region includes performing a rapid thermal anneal. After performing the spacer formation and junction formation on both the memory cell region and the high-voltage device region, spacer formation and junction formation is performed on a low-voltage device region in the periphery section.