Invention Grant
- Patent Title: Resistive memory device and method for fabricating the same
- Patent Title (中): 电阻式存储器件及其制造方法
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Application No.: US12971583Application Date: 2010-12-17
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Publication No.: US08598011B2Publication Date: 2013-12-03
- Inventor: Seok-Pyo Song , Yu-Jin Lee
- Applicant: Seok-Pyo Song , Yu-Jin Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0127447 20091218
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L47/00 ; H01L21/44
Abstract:
A resistive memory device includes a plurality of resistive units, each resistive unit including: a lower electrode formed over a substrate; a resistive layer formed over the lower electrode; and an upper electrode formed over the resistive layer, wherein edge parts of the lower and upper electrodes, which come in contact with the resistive layer, is formed with a rounding shape.
Public/Granted literature
- US20110147694A1 RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-06-23
Information query
IPC分类:
