发明授权
US08598017B2 Fiber SOI substrate, semiconductor device using this, and manufacturing method thereof
有权
光纤SOI衬底，使用该半导体器件的半导体器件及其制造方法
- 专利标题： Fiber SOI substrate, semiconductor device using this, and manufacturing method thereof
- 专利标题（中）： 光纤SOI衬底，使用该半导体器件的半导体器件及其制造方法
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申请号： US13614512申请日： 2012-09-13
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公开(公告)号： US08598017B2公开(公告)日： 2013-12-03
- 发明人: Takashi Fuyuki , Kenkichi Suzuki , Sadayuki Toda , Hisashi Koaizawa
- 申请人： Takashi Fuyuki , Kenkichi Suzuki , Sadayuki Toda , Hisashi Koaizawa
- 申请人地址： JP Tokyo
- 专利权人： The Furukawa Electric Co., Ltd.
- 当前专利权人： The Furukawa Electric Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2004-314882 20041028
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
The present invention provides a SOI substrate that can realize a composite device formed of a MOS integrated circuit and a passive device and can reduce a size and a manufacturing cost of a semiconductor device. There is provided a fiber SOI substrate 5 comprising a fiber 1 with a polygonal cross section, and a semiconductor thin film 3 crystallized after film formation on at least one surface of the fiber 1, and a plurality of grooves 8 that extend in a linear direction of the fiber 1 and are arranged at intervals in a width direction are formed on a surface of the fiber 1.
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