Invention Grant
- Patent Title: Process for making conductive post with footing profile
- Patent Title (中): 制造具有基础型材的导电柱的方法
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Application No.: US12855360Application Date: 2010-08-12
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Publication No.: US08598030B2Publication Date: 2013-12-03
- Inventor: Chen-Cheng Kuo , Chen-Shien Chen
- Applicant: Chen-Cheng Kuo , Chen-Shien Chen
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A process for making a copper post with footing profile employs dual photoresist films of different photosensitivities and thicknesses on an under-bump-metallurgy (UBM) layer. After an exposure lithography process, a first opening with a substantially vertical sidewall is formed in a first photoresist film, and a second opening with a sloped sidewall is formed in a second photoresist film. The second opening has a top diameter and a bottom diameter greater than the top diameter, and the bottom diameter is greater than the diameter of the first opening. A conductive layer is then formed in the first opening and the second opening followed by removing the dual photoresist films.
Public/Granted literature
- US20120040524A1 PROCESS FOR MAKING CONDUCTIVE POST WITH FOOTING PROFILE Public/Granted day:2012-02-16
Information query
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