Invention Grant
- Patent Title: Method for forming a salicide layer
- Patent Title (中): 形成硅化物层的方法
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Application No.: US13646726Application Date: 2012-10-07
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Publication No.: US08598033B1Publication Date: 2013-12-03
- Inventor: Kuo-Chih Lai , Chia Chang Hsu , Bor-Shyang Liao , Chun-Ling Lin , Shu Min Huang , Min-Chung Cheng , Chi-Mao Hsu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
The present invention provides a method for forming a salicide layer. First, a metal-atom-containing layer is formed on a substrate, a first rapid thermal process (RTP) is then performed to the metal-atom-containing layer to form a transitional salicide layer on a specific region. The metal-atom-containing layer is then removed, a thermal conductive layer is formed on the surface of the transitional salicide layer, and a second RTP is performed on the transitional salicide layer.
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