- 专利标题: Semiconductor having a high aspect ratio via
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申请号: US13481574申请日: 2012-05-25
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公开(公告)号: US08598687B2公开(公告)日: 2013-12-03
- 发明人: Yuan-Chih Hsieh , Richard Chu , Ming-Tung Wu , Martin Liu , Lan-Lin Chao , Chia-Shiung Tsai
- 申请人: Yuan-Chih Hsieh , Richard Chu , Ming-Tung Wu , Martin Liu , Lan-Lin Chao , Chia-Shiung Tsai
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L29/40
- IPC分类号: H01L29/40
摘要:
The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer.
公开/授权文献
- US20120235300A1 SEMICONDUCTOR HAVING A HIGH ASPECT RATIO VIA 公开/授权日:2012-09-20
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