Invention Grant
- Patent Title: Gate driving circuit
- Patent Title (中): 门驱动电路
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Application No.: US13260069Application Date: 2010-05-07
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Publication No.: US08598920B2Publication Date: 2013-12-03
- Inventor: Hiroshi Nakatake , Shinichi Kinouchi , Tatsuya Kitamura
- Applicant: Hiroshi Nakatake , Shinichi Kinouchi , Tatsuya Kitamura
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-120802 20090519
- International Application: PCT/JP2010/003128 WO 20100507
- International Announcement: WO2010/134276 WO 20101125
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A gate driving circuit for driving a voltage-driven switching device is provided with a current limiting circuit for limiting a gate current ig that flows into a gate terminal through a gate resistor at turn-on to a current limit value IL which defines an upper limit value. The current limit value IL is set at a value which is larger than a gate current value I2 at turn-on of the switching device during a period when the Miller effect occurs but is smaller than a gate current value I1 at a point in time when a main current begins to flow at turn-on in a case where the gate current ig is not limited by the current limiting circuit. This arrangement makes a variation in a collector current of the switching device moderate at turn-on thereof when the collector current begins to flow, thereby reducing high-frequency noise.
Public/Granted literature
- US20120013371A1 GATE DRIVING CIRCUIT Public/Granted day:2012-01-19
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