Invention Grant
- Patent Title: Boosting memory module performance
- Patent Title (中): 提升内存模块性能
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Application No.: US13310654Application Date: 2011-12-02
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Publication No.: US08599636B2Publication Date: 2013-12-03
- Inventor: Daniel Solvin , Martin Mueller , Donald Lieberman , John Beekley
- Applicant: Daniel Solvin , Martin Mueller , Donald Lieberman , John Beekley
- Applicant Address: US CA Fremont
- Assignee: Corsair Memory, Inc.
- Current Assignee: Corsair Memory, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Reed Smith LLP
- Agent Carina M. Tan
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
Power supplied to a memory module is provided. A first voltage is supplied to a first power distribution pathway, the first voltage being from a voltage supplied to a printed circuit board on which the memory module resides. A second voltage is generated, the second voltage being generated by a voltage regulator. The second voltage is supplied to a second power distribution pathway.
Public/Granted literature
- US20130141991A1 Boosting Memory Module Performance Public/Granted day:2013-06-06
Information query
