发明授权
- 专利标题: Method of manufacturing nanoimprint stamp
- 专利标题(中): 制造纳米压印印花的方法
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申请号: US13170766申请日: 2011-06-28
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公开(公告)号: US08603349B2公开(公告)日: 2013-12-10
- 发明人: Byung-kyu Lee , Du-hyun Lee , Woong Ko
- 申请人: Byung-kyu Lee , Du-hyun Lee , Woong Ko
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2010-0128624 20101215
- 主分类号: B44C1/22
- IPC分类号: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
摘要:
Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.
公开/授权文献
- US20120152887A1 Method Of Manufacturing Nanoimprint Stamp 公开/授权日:2012-06-21
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