发明授权
- 专利标题: Photovoltaic device with transparent, conductive barrier layer
- 专利标题(中): 具有透明导电阻挡层的光伏器件
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申请号: US13005422申请日: 2011-01-12
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公开(公告)号: US08604336B2公开(公告)日: 2013-12-10
- 发明人: Rebekah K. Feist , Marty W. DeGroot , Todd R. Bryden , Joseph George
- 申请人: Rebekah K. Feist , Marty W. DeGroot , Todd R. Bryden , Joseph George
- 申请人地址: US MI Midland
- 专利权人: Dow Global Technologies LLC
- 当前专利权人: Dow Global Technologies LLC
- 当前专利权人地址: US MI Midland
- 代理机构: Kagan Binder, PLLC
- 主分类号: H01L31/00
- IPC分类号: H01L31/00 ; H01L21/00
摘要:
The present invention provides strategies for providing photovoltaic devices that are more resistant to moisture and/or oxygen degradation and the accompanying migration of key elements such as Na, Li, and the lanthanoid series of elements from the absorber layer and that have enhanced service life and improved performance. These strategies are particularly useful in the fabrication of chalcogenide-based photovoltaic devices such as chalcogenide-based solar cells. These strategies incorporate a barrier region between the photovoltaic absorber region and the front side collection grid. The barrier region keeps moisture and/or oxygen from the absorber layer and contains key elements such as Na, Li, and Ln in the absorber layer. As a result, the absorber layer retains its performance capabilities for an extended period of time.
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