Invention Grant
US08604457B2 Phase-change memory element 有权
相变存储元件

Phase-change memory element
Abstract:
A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.
Public/Granted literature
Information query
Patent Agency Ranking
0/0