Invention Grant
- Patent Title: Phase-change memory element
- Patent Title (中): 相变存储元件
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Application No.: US12269282Application Date: 2008-11-12
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Publication No.: US08604457B2Publication Date: 2013-12-10
- Inventor: Frederick T Chen , Ming-Jinn Tsai
- Applicant: Frederick T Chen , Ming-Jinn Tsai
- Applicant Address: US DC Dover
- Assignee: Higgs Opl. Capital LLC
- Current Assignee: Higgs Opl. Capital LLC
- Current Assignee Address: US DC Dover
- Agency: Stolowitz Ford Cowger LLP
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.
Public/Granted literature
- US20100117050A1 PHASE-CHANGE MEMORY ELEMENT Public/Granted day:2010-05-13
Information query
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