发明授权
US08604868B2 Dynamic biasing circuit for a protection stage using low voltage transistors
有权
用于使用低压晶体管的保护级的动态偏置电路
- 专利标题: Dynamic biasing circuit for a protection stage using low voltage transistors
- 专利标题(中): 用于使用低压晶体管的保护级的动态偏置电路
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申请号: US13435210申请日: 2012-03-30
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公开(公告)号: US08604868B2公开(公告)日: 2013-12-10
- 发明人: Carmelo Ucciardello , Antonino Conte , Giovanni Matranga , Rosario Roberto Grasso
- 申请人: Carmelo Ucciardello , Antonino Conte , Giovanni Matranga , Rosario Roberto Grasso
- 申请人地址: IT Agrate Brianza (MB)
- 专利权人: STMicroelectronics S.R.L.
- 当前专利权人: STMicroelectronics S.R.L.
- 当前专利权人地址: IT Agrate Brianza (MB)
- 代理机构: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- 优先权: ITTO2011A0294 20110401
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A biasing circuit may include an input configured to receive a supply voltage, a value of which is higher than a limit voltage. The biasing circuit may also include a control stage configured to generate first and second control signals with mutually complementary values, equal alternatively to a first value, in a first half-period of a clock signal, or to a second value, in a second half-period of the clock signal. The first and second values may be a function of the supply and limit voltages. The biasing circuit may also include a biasing stage configured to generate a biasing voltage as a function of the values of the first and second control signals. The first and second control signals may control transfer transistors for transferring the supply voltage to respective outputs, while the biasing voltage may be for controlling protection transistors to reduce overvoltages on the transfer transistors.
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