发明授权
- 专利标题: Multilevel nonvolatile semiconductor memory system
- 专利标题(中): 多级非易失性半导体存储器系统
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申请号: US13050431申请日: 2011-03-17
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公开(公告)号: US08605500B2公开(公告)日: 2013-12-10
- 发明人: Naoki Kobayashi , Mitsuaki Honma , Noboru Shibata
- 申请人: Naoki Kobayashi , Mitsuaki Honma , Noboru Shibata
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-191368 20100827
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
According to one embodiment, a system includes a memory, a controller which controls an operation of the memory in a data program, and data bus which connects the memory to the controller. The memory comprises a memory cell array with memory cells which have a bit assignment to 2x (x is an integer number of 3 or more) threshold distributions, each memory cell storing x bits, and a control circuit which controls the data program of x bits to the memory cells. The controller comprises a first step generating y bit (y is an integer number and y
公开/授权文献
- US20120054416A1 MULTILEVEL NONVOLATILE SEMICONDUCTOR MEMORY SYSTEM 公开/授权日:2012-03-01
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