- 专利标题: Lithography methods, methods for forming patterning tools and patterning tools
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申请号: US13214865申请日: 2011-08-22
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公开(公告)号: US08609302B2公开(公告)日: 2013-12-17
- 发明人: Jianming Zhou , Scott L. Light , David Kewley , Prasanna Srinivasan , Anton deVilliers
- 申请人: Jianming Zhou , Scott L. Light , David Kewley , Prasanna Srinivasan , Anton deVilliers
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman, Lundberg & Woessner, P.A.
- 主分类号: G03F1/60
- IPC分类号: G03F1/60
摘要:
Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.
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