Invention Grant
- Patent Title: Smart subfield method for E-beam lithography
-
Application No.: US13484434Application Date: 2012-05-31
-
Publication No.: US08609308B1Publication Date: 2013-12-17
- Inventor: Pei-Shiang Chen , Hung-Chun Wang , Jeng-Horng Chen , Cheng-Hung Chen , Shih-Chi Wang , Nian-Fuh Cheng , Chia-Chi Lin
- Applicant: Pei-Shiang Chen , Hung-Chun Wang , Jeng-Horng Chen , Cheng-Hung Chen , Shih-Chi Wang , Nian-Fuh Cheng , Chia-Chi Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semicondcutor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semicondcutor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G03C5/00

Abstract:
The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.
Public/Granted literature
- US20130323648A1 SMART SUBFIELD METHOD FOR E-BEAM LITHOGRAPHY Public/Granted day:2013-12-05
Information query