A semiconductor device includes a substrate and a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode. The upper electrode includes a first layer formed of an oxide whose stoichiometric composition is expressed as AOx1 and whose actual composition is expressed as AOx2; a second layer formed on the first layer and formed of an oxide whose stoichiometric composition is expressed as BOy1 and whose actual composition is expressed as BOy2; and a metal layer formed on the second layer. The second layer is higher in ratio of oxidation than the first layer. The composition parameters x1, x2, y1, and y2 satisfy y2/y1>x2/x1, and the second layer includes an interface layer of the stoichiometric composition formed at an interface with the metal layer. The interface layer is higher in ratio of oxidation than the rest of the second layer.