发明授权
- 专利标题: Manufacturing method for array substrate with fringe field switching type thin film transistor liquid crystal display
- 专利标题(中): 具有条纹场开关型薄膜晶体管液晶显示器的阵列基板的制造方法
-
申请号: US13499353申请日: 2011-04-26
-
公开(公告)号: US08609477B2公开(公告)日: 2013-12-17
- 发明人: Youngsuk Song , Seungjin Choi , Seongyeol Yoo
- 申请人: Youngsuk Song , Seungjin Choi , Seongyeol Yoo
- 申请人地址: CN Beijing
- 专利权人: Beijing Boe Optoelectronics Technology Co., Ltd.
- 当前专利权人: Beijing Boe Optoelectronics Technology Co., Ltd.
- 当前专利权人地址: CN Beijing
- 代理机构: Ladas & Parry LLP
- 优先权: CN201010159005 20100426
- 国际申请: PCT/CN2011/073336 WO 20110426
- 国际公布: WO2011/134390 WO 20111103
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
A manufacturing method for an array substrate with a fringe field switching (FFS) type thin film transistor (TFT) liquid crystal display (LCD) includes the following steps. A pattern of a gate line (1), a gate electrode, a common electrode (6) and a common electrode line (5) is formed by patterning a first transparent conductive film and a first metal film formed successively on a transparent substrate. Contact holes of the gate line in the pad area and a semiconductor pattern are formed through a patterning process after a gate insulator film, and a semiconductor film and a doped semiconductor film are formed successively. A second metal film is deposited and patterned. A second transparent conductive film is deposited and a lift-off process is performed. And then, a pattern of a source electrode, a drain electrode, a TFT channel and a pixel electrode (4) is formed by etching the exposed second metal film and the doped semiconductor film.
公开/授权文献
信息查询
IPC分类: