发明授权
- 专利标题: Method for manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12826007申请日: 2010-06-29
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公开(公告)号: US08609478B2公开(公告)日: 2013-12-17
- 发明人: Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
- 申请人: Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2009-156411 20090630
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.
公开/授权文献
- US20110003427A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2011-01-06