发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12686005申请日： 2010-01-12
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公开(公告)号： US08609487B2公开(公告)日： 2013-12-17
- 发明人: Katsuaki Natori , Masayuki Tanaka , Akihito Yamamoto , Katsuyuki Sekine , Ryota Fujitsuka , Daisuke Nishida , Yoshio Ozawa
- 申请人： Katsuaki Natori , Masayuki Tanaka , Akihito Yamamoto , Katsuyuki Sekine , Ryota Fujitsuka , Daisuke Nishida , Yoshio Ozawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 优先权： JP2006-112189 20060414
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.
公开/授权文献
- US20100136780A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2010-06-03
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