发明授权
- 专利标题： Structure and method for a transformer with magnetic features
- 专利标题（中）： 具有磁特性的变压器的结构和方法
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申请号： US13340856申请日： 2011-12-30
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公开(公告)号： US08610247B2公开(公告)日： 2013-12-17
- 发明人: Hsiao-Tsung Yen , Yu-Ling Lin , Ying-Ta Lu , Huan-Neng Chen , Ho-Hsiang Chen
- 申请人： Hsiao-Tsung Yen , Yu-Ling Lin , Ying-Ta Lu , Huan-Neng Chen , Ho-Hsiang Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/08
- IPC分类号： H01L27/08
摘要：
The present disclosure provides a semiconductor device. The semiconductor device includes a first inductor formed on a first substrate; a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer; and a plurality of micro-bump features configured between the first and second substrates. The plurality of micro-bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors.
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