Invention Grant
US08610269B2 Semiconductor device, method for manufacturing semiconductor device, and circuit device using semiconductor device 有权
半导体装置,半导体装置的制造方法以及使用半导体装置的电路装置

  • Patent Title: Semiconductor device, method for manufacturing semiconductor device, and circuit device using semiconductor device
  • Patent Title (中): 半导体装置,半导体装置的制造方法以及使用半导体装置的电路装置
  • Application No.: US13379273
    Application Date: 2010-06-23
  • Publication No.: US08610269B2
    Publication Date: 2013-12-17
  • Inventor: Kenji Nanba
  • Applicant: Kenji Nanba
  • Applicant Address: JP Tokyo
  • Assignee: NEC Corporation
  • Current Assignee: NEC Corporation
  • Current Assignee Address: JP Tokyo
  • Priority: JP2009-149945 20090624
  • International Application: PCT/JP2010/061082 WO 20100623
  • International Announcement: WO2010/150912 WO 20101229
  • Main IPC: H01L23/485
  • IPC: H01L23/485
Semiconductor device, method for manufacturing semiconductor device, and circuit device using semiconductor device
Abstract:
[Problem] A semiconductor device which achieves a fine pitch, a high throughput and a high connection reliability, especially in flip-chip mounting is provided. A method for manufacturing the semiconductor device and a circuit device using the semiconductor device are also provided.[Means for solving the problem] The semiconductor device has: an electrode; an insulating part having an opening on the electrode; a protruding part formed on the electrode; a protecting part which is formed at the periphery of the protruding part and electrically isolates the protruding part; and a bonding part which is formed on the protecting part by being spaced apart from the protruding part. An upper surface of the protruding part, an upper surface of the protecting part, and an upper surface of the bonding part form the same plane.
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