Invention Grant
- Patent Title: Stacked memory devices
- Patent Title (中): 堆叠式存储器件
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Application No.: US12662785Application Date: 2010-05-04
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Publication No.: US08611121B2Publication Date: 2013-12-17
- Inventor: Seung-eon Ahn , Ho-jung Kim , Chul-woo Park , Sang-beom Kang , Hyun-ho Choi
- Applicant: Seung-eon Ahn , Ho-jung Kim , Chul-woo Park , Sang-beom Kang , Hyun-ho Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce P.L.C.
- Priority: KR10-2009-0038949 20090504; KR10-2010-0004481 20100118
- Main IPC: G11C5/02
- IPC: G11C5/02

Abstract:
A stacked memory device may include a substrate, a plurality of memory groups sequentially stacked on the substrate, each memory group including at least one memory layer, a plurality of X-decoder layers, at least one of the plurality of X-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups, and a plurality of Y-decoder layers disposed alternately with the plurality of X-decoder layers, at least one of the plurality of Y-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups.
Public/Granted literature
- US20100309705A1 Stacked memory devices Public/Granted day:2010-12-09
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