Invention Grant
US08611121B2 Stacked memory devices 有权
堆叠式存储器件

Stacked memory devices
Abstract:
A stacked memory device may include a substrate, a plurality of memory groups sequentially stacked on the substrate, each memory group including at least one memory layer, a plurality of X-decoder layers, at least one of the plurality of X-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups, and a plurality of Y-decoder layers disposed alternately with the plurality of X-decoder layers, at least one of the plurality of Y-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups.
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