- 专利标题: Program temperature dependent read
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申请号: US13335524申请日: 2011-12-22
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公开(公告)号: US08611157B2公开(公告)日: 2013-12-17
- 发明人: Deepanshu Dutta
- 申请人: Deepanshu Dutta
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies Inc.
- 当前专利权人: SanDisk Technologies Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Vierra Magen Marcus LLP
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
Methods and non-volatile storage systems are provided for using compensation that depends on the temperature at which the memory cells were programmed. Note that the read level compensation may have a component that is not dependent on the memory cells' Tco. That is, the component is not necessarily based on the temperature dependence of the Vth of the memory cells. The compensation may have a component that is dependent on the difference in width of individual Vth distributions of the different states across different temperatures of program verify. This compensation may be used for both verify and read, although a different amount of compensation may be used during read than during verify.
公开/授权文献
- US20130163342A1 PROGRAM TEMPERATURE DEPENDENT READ 公开/授权日:2013-06-27