发明授权
US08614447B2 Semiconductor substrates using bandgap material between III-V channel material and insulator layer
有权
在III-V沟道材料和绝缘体层之间使用带隙材料的半导体衬底
- 专利标题： Semiconductor substrates using bandgap material between III-V channel material and insulator layer
- 专利标题（中）： 在III-V沟道材料和绝缘体层之间使用带隙材料的半导体衬底
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申请号： US13361004申请日： 2012-01-30
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公开(公告)号： US08614447B2公开(公告)日： 2013-12-24
- 发明人: Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人： Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Improved semiconductor substrates are provided that employ a wide bandgap material between the channel and the insulator. A semiconductor substrate comprises a channel layer comprised of a III-V material; an insulator layer; and a wide bandgap material between the channel layer and the insulator layer, wherein a conduction band offset (ΔEc) between the channel layer and the wide bandgap material is between 0.05 eV and 0.8 eV. The channel layer can be comprised of, for example, In1-xGaxAs or In1-xGaxSb, with x varying from 0 to 1. The wide bandgap material can be comprised of, for example, In1-yAlyAs, In1-yAlyP, Al1-yGayAs or In1-yGayP, with y varying from 0 to 1.