发明授权
US08614480B2 Power MOSFET with integrated gate resistor and diode-connected MOSFET
有权
功率MOSFET集成栅极电阻和二极管连接的MOSFET
- 专利标题： Power MOSFET with integrated gate resistor and diode-connected MOSFET
- 专利标题（中）： 功率MOSFET集成栅极电阻和二极管连接的MOSFET
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申请号： US13540862申请日： 2012-07-03
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公开(公告)号： US08614480B2公开(公告)日： 2013-12-24
- 发明人: Jun Wang , Shuming Xu , Jacek Korec
- 申请人： Jun Wang , Shuming Xu , Jacek Korec
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction.
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