According to one exemplary embodiment, a method for fabricating a MIM capacitor in a semiconductor die includes forming a dielectric one segment over a substrate and a metal one segment over the dielectric one segment, where the metal one segment forms a lower electrode of the MIM capacitor. The method further includes forming a dielectric two segment over the dielectric one segment and a metal two segment over the dielectric two segment, where a portion of the metal two segment forms an upper electrode of the MIM capacitor. The metal one segment comprises a first gate metal. The metal two segment can comprise a second gate metal.