Invention Grant
US08614912B2 Magnetic random access memory (MRAM)layout with uniform pattern
有权
具有均匀图案的磁性随机存取存储器(MRAM)布局
- Patent Title: Magnetic random access memory (MRAM)layout with uniform pattern
- Patent Title (中): 具有均匀图案的磁性随机存取存储器(MRAM)布局
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Application No.: US13869086Application Date: 2013-04-24
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Publication No.: US08614912B2Publication Date: 2013-12-24
- Inventor: Kangho Lee , Taehyun Kim , Xia Li , Jung Pill Kim , Seung H. Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: G11C11/14
- IPC: G11C11/14

Abstract:
A large scale memory array includes a uniform pattern of uniformly sized dummy bit cells and active bit cells. Sub-arrays within the large scale memory array are separated by the dummy bit cells. Signal distribution circuitry is formed with a width or height corresponding to the width or height of the dummy bit cells so that the signal distribution circuitry occupies the same footprint as the dummy bit cells without disrupting the uniform pattern across the large scale array. Edge dummy cells of a similar size or larger than the standard size bit cells may be placed around the edge of the large scale array to further reduce pattern loading affects.
Public/Granted literature
- US20130235639A1 MAGNETIC RANDOM ACCESS MEMORY (MRAM)LAYOUT WITH UNIFORM PATTERN Public/Granted day:2013-09-12
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