发明授权
- 专利标题: High efficiency light emitting diode
- 专利标题(中): 高效率发光二极管
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申请号: US12986774申请日: 2011-01-07
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公开(公告)号: US08618565B2公开(公告)日: 2013-12-31
- 发明人: Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
- 申请人: Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
- 申请人地址: KR Ansan-si
- 专利权人: Seoul Opto Device Co., Ltd.
- 当前专利权人: Seoul Opto Device Co., Ltd.
- 当前专利权人地址: KR Ansan-si
- 代理机构: H.C. Park & Associates, PLC
- 优先权: KR10-2010-0025174 20100322; KR10-2010-0060291 20100625
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.
公开/授权文献
- US20110227109A1 HIGH EFFICIENCY LIGHT EMITTING DIODE 公开/授权日:2011-09-22