发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12848411申请日: 2010-08-02
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公开(公告)号: US08618604B2公开(公告)日: 2013-12-31
- 发明人: Atsushi Narazaki
- 申请人: Atsushi Narazaki
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2009-238577 20091015
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
A semiconductor wafer has a main surface. A main chip region is formed on the main surface. A sub-chip region is smaller in area than the main chip region, and positioned on an edge side of the semiconductor wafer relative to the main chip region. The sub-chip region is identical to the main chip region in design pattern. Accordingly, a semiconductor device in which occurrence of a pattern failure at the edge of the wafer can be prevented when chips are arranged in the surface of the semiconductor wafer and a method of manufacturing the same can be obtained.
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