Invention Grant
- Patent Title: Flash memory apparatus for controlling operation in response to generation of interrupt signal and method of controlling the same
- Patent Title (中): 用于响应于中断信号的产生而控制操作的闪存装置及其控制方法
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Application No.: US12639858Application Date: 2009-12-16
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Publication No.: US08621140B2Publication Date: 2013-12-31
- Inventor: Choong Hun Lee , Jae Don Lee , Min Young Son
- Applicant: Choong Hun Lee , Jae Don Lee , Min Young Son
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2009-0020584 20090311
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
Described herein is a flash memory apparatus and method controlling the same. The flash memory apparatus includes a processor and one or more flash memory units. The processor controls one or more memory operations performed in the one or more flash memory units. The processor stops controlling a memory operation in a flash memory unit when the memory operation is performed, and continues performing the memory operation in the flash memory unit when the flash memory unit generates an interrupt signal.
Public/Granted literature
- US20100235566A1 FLASH MEMORY APPARATUS AND METHOD OF CONTROLLING THE SAME Public/Granted day:2010-09-16
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