发明授权
US08621406B2 System and methods for converting planar design to FinFET design
有权
将平面设计转换为FinFET设计的系统和方法
- 专利标题： System and methods for converting planar design to FinFET design
- 专利标题（中）： 将平面设计转换为FinFET设计的系统和方法
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申请号： US13416642申请日： 2012-03-09
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公开(公告)号： US08621406B2公开(公告)日： 2013-12-31
- 发明人: Cheok-Kei Lei , Yi-Tang Lin , Hsiao-Hui Chen , Yu-Ning Chang , Shu-Yu Chen , Chien-Wen Chen , Chih-Sheng Chang , Clement Hsingjen Wann
- 申请人： Cheok-Kei Lei , Yi-Tang Lin , Hsiao-Hui Chen , Yu-Ning Chang , Shu-Yu Chen , Chien-Wen Chen , Chih-Sheng Chang , Clement Hsingjen Wann
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. The planar layout is analyzed and corresponding FinFET structures are generated.