发明授权
US08622021B2 High lifetime consumable silicon nitride-silicon dioxide plasma processing components
有权
高寿命消耗性氮化硅 - 二氧化硅等离子体处理部件
- 专利标题： High lifetime consumable silicon nitride-silicon dioxide plasma processing components
- 专利标题（中）： 高寿命消耗性氮化硅 - 二氧化硅等离子体处理部件
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申请号： US12740091申请日： 2008-10-27
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公开(公告)号： US08622021B2公开(公告)日： 2014-01-07
- 发明人: Travis R. Taylor , Mukund Srinivasan , Bobby Kadkhodayan , K. Y. Ramanujam , Biljana Mikijelj , Shanghua Wu
- 申请人： Travis R. Taylor , Mukund Srinivasan , Bobby Kadkhodayan , K. Y. Ramanujam , Biljana Mikijelj , Shanghua Wu
- 申请人地址： US CA Fremont US CA Costa Mesa
- 专利权人： Lam Research Corporation,Ceradyne Inc.
- 当前专利权人： Lam Research Corporation,Ceradyne Inc.
- 当前专利权人地址： US CA Fremont US CA Costa Mesa
- 代理机构： Buchanan Ingersoll & Rooney PC
- 国际申请： PCT/US2008/012173 WO 20081027
- 国际公布： WO2009/058235 WO 20090507
- 主分类号： C23C16/50
- IPC分类号： C23C16/50 ; C23C16/22 ; H01L21/306 ; C23F1/00 ; B22F3/04 ; B22F3/15 ; C23C16/44
摘要：
A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.
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