发明授权
- 专利标题: Methods of fabricating metal hard masks
- 专利标题(中): 制造金属硬掩模的方法
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申请号: US13343857申请日: 2012-01-05
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公开(公告)号: US08623468B2公开(公告)日: 2014-01-07
- 发明人: Su-Horng Lin , Lin-Jung Wu , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人: Su-Horng Lin , Lin-Jung Wu , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H05H1/24
- IPC分类号: H05H1/24
摘要:
Methods of fabricating a metal hard mask and a metal hard mask fabricated by such methods are described. The method includes flowing at least one metal reactant gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactant gas includes a metal-halogen gas or a metal-organic gas. The method further includes depositing a hard mask metal layer by CVD using the at least one metal reactant gas.
公开/授权文献
- US20130174982A1 METAL HARD MASK FABRICATION 公开/授权日:2013-07-11
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