发明授权
- 专利标题： Multi-nanometer-projection apparatus for lithography, oxidation, inspection, and measurement
- 专利标题（中）： 用于光刻，氧化，检查和测量的多纳米投影设备
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申请号： US13101443申请日： 2011-05-05
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公开(公告)号： US08624338B2公开(公告)日： 2014-01-07
- 发明人: Fei-Gwo Tsai , Chwen Yu
- 申请人： Fei-Gwo Tsai , Chwen Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
An apparatus, method for manufacturing the apparatus, and method for processing a substrate using the apparatus are disclosed. An exemplary apparatus includes a substrate having a plurality of cells, wherein each cell includes a cell structure. The cell structure includes a piezoelectric film portion and a tip disposed over the piezoelectric film portion. The tip is physically coupled with the piezoelectric film portion.