发明授权
- 专利标题： Low noise CMOS ring oscillator
- 专利标题（中）： 低噪声CMOS环形振荡器
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申请号： US13212771申请日： 2011-08-18
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公开(公告)号： US08624681B2公开(公告)日： 2014-01-07
- 发明人: Zhendong Guo , Jun Ming
- 申请人： Zhendong Guo , Jun Ming
- 申请人地址： BM Hamilton
- 专利权人： Marvell International Ltd.
- 当前专利权人： Marvell International Ltd.
- 当前专利权人地址： BM Hamilton
- 主分类号： H03K3/03
- IPC分类号： H03K3/03
摘要：
Disclosed is an inverter cell design comprising first and second transistors and first and second resistors. In disclosed embodiments, the first resistor is connected to a source of the first transistor and the second resistor is connected to a source of the second transistor. The first and second resistors are configured for connection to respective first and second voltage potentials. The inverter cells may be configured in a ring oscillator. A crystal oscillator may comprise an inverter cell according to the present disclosure.
公开/授权文献
- US20120049964A1 LOW NOISE CMOS RING OSCILLATOR 公开/授权日：2012-03-01
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