Invention Grant
- Patent Title: Non-salicide polysilicon fuse
- Patent Title (中): 非硅化物多晶硅保险丝
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Application No.: US13107441Application Date: 2011-05-13
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Publication No.: US08625324B2Publication Date: 2014-01-07
- Inventor: Sung-Chieh Lin , David Yen , Chi-Hsu Chiu , Kuoyuan (Peter) Hsu
- Applicant: Sung-Chieh Lin , David Yen , Chi-Hsu Chiu , Kuoyuan (Peter) Hsu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C17/00
- IPC: G11C17/00 ; H01L23/52
Abstract:
The embodiments of methods and structures disclosed herein provide mechanisms of forming and programming a non-salicided polysilicon fuse. The non-salicided polysilicon fuse and a programming transistor form a one-time programmable (OTP) memory cell, which can be programmed with a low programming voltage.
Public/Granted literature
- US20120257435A1 NON-SALICIDE POLYSILICON FUSE Public/Granted day:2012-10-11
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