Invention Grant
- Patent Title: Negative high voltage generator and non-volatile memory device including negative high voltage generator
- Patent Title (中): 负高压发生器和非易失性存储器件包括负高压发生器
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Application No.: US13325876Application Date: 2011-12-14
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Publication No.: US08625366B2Publication Date: 2014-01-07
- Inventor: Seung-Won Lee
- Applicant: Seung-Won Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0128120 20101215
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C7/00 ; G05F1/10 ; G05F3/02
Abstract:
A negative high voltage generator includes a charge providing unit and a voltage conversion unit. The charge providing unit is configured to periodically output a predetermined amount of positive charges received from a supply voltage. The voltage conversion unit is configured to store the positive charges and to discharge the stored positive charges to a ground voltage to generate a negative high voltage having a magnitude larger than a magnitude of the supply voltage.
Public/Granted literature
- US20120155208A1 NEGATIVE HIGH VOLTAGE GENERATOR AND NON-VOLATILE MEMORY DEVICE INCLUDING NEGATIVE HIGH VOLTAGE GENERATOR Public/Granted day:2012-06-21
Information query
