发明授权
- 专利标题: Method of designing nonvolatile memory device
- 专利标题(中): 设计非易失性存储器件的方法
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申请号: US13570498申请日: 2012-08-09
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公开(公告)号: US08627257B2公开(公告)日: 2014-01-07
- 发明人: Jae-Ho Kim , Dae-Sin Kim , Hyun-Jae Kim , Young-Gu Kim
- 申请人: Jae-Ho Kim , Dae-Sin Kim , Hyun-Jae Kim , Young-Gu Kim
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2011-0081028 20110816
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
In a computer-implemented method of designing a nonvolatile memory device, first parameters associated with external environmental conditions are set. Second parameters associated with structural characteristics and internal environmental conditions are set. A first initial operation condition associated with an erase operation is determined based on the first and second parameters. A second initial operation condition associated with a program operation is determined based on the first and second parameters and the first initial operation condition. A final operation condition associated with reliability is determined based on the first and second parameters, and the first and second initial operation condition.
公开/授权文献
- US20130047132A1 METHOD OF DESIGNING NONVOLATILE MEMORY DEVICE 公开/授权日:2013-02-21
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