发明授权
- 专利标题： Manufacturing method of a memory device to be authenticated
- 专利标题（中）： 要认证的存储器件的制造方法
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申请号： US13523485申请日： 2012-06-14
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公开(公告)号： US08627455B1公开(公告)日： 2014-01-07
- 发明人: Yuji Nagai , Taku Kato , Tatsuyuki Matsushita
- 申请人： Yuji Nagai , Taku Kato , Tatsuyuki Matsushita
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： G06F21/00
- IPC分类号： G06F21/00
摘要：
According to one embodiment, a manufacturing method of a device to be authenticated, wherein the device includes a first memory area which is prohibited from data-reading and data-writing after shipping from a memory vendor; a second memory area which is allowed to data-read from outside after shipping from the memory vendor; and a third memory area which is allowed to data-read and data-write from outside after sipping from the memory vendor.
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