发明授权
- 专利标题： Semiconductor device and method of manufacturing semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US12815703申请日： 2010-06-15
-
公开(公告)号： US08629001B2公开(公告)日： 2014-01-14
- 发明人: Koichi Sugihara
- 申请人： Koichi Sugihara
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： White & Case LLP
- 优先权： JP2009-164841 20090713
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A semiconductor device includes: a first semiconductor element having a first terminal surface on which a first terminal is disposed and a first rear surface on which no terminal is disposed; a second semiconductor element having a second terminal surface on which a second terminal is disposed and a second rear surface on which no terminal is disposed, the second rear surface being bonded to the first rear surface; a terminal member having a surface set substantially flush with the second terminal surface; and a conductive wire connecting the terminal member and the first terminal.
公开/授权文献
信息查询
IPC分类:
