发明授权
US08629504B2 Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same
有权
具有片上电阻的非常薄的绝缘体上半导体（ETSOI）集成电路及其形成方法
- 专利标题： Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same
- 专利标题（中）： 具有片上电阻的非常薄的绝缘体上半导体（ETSOI）集成电路及其形成方法
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申请号： US13433401申请日： 2012-03-29
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公开(公告)号： US08629504B2公开(公告)日： 2014-01-14
- 发明人: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Ghavam G. Shahidi
- 申请人： Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Ghavam G. Shahidi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
An electrical device is provided that in one embodiment includes a semiconductor-on-insulator (SOI) substrate having a semiconductor layer with a thickness of less than 10 nm. A semiconductor device having a raised source region and a raised drain region of a single crystal semiconductor material of a first conductivity is present on a first surface of the semiconductor layer. A resistor composed of the single crystal semiconductor material of the first conductivity is present on a second surface of the semiconductor layer. A method of forming the aforementioned electrical device is also provided.
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