发明授权
- 专利标题： Semiconductor device and level shifting circuit for the same
- 专利标题（中）： 半导体器件和电平移位电路相同
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申请号： US13334012申请日： 2011-12-21
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公开(公告)号： US08629696B2公开(公告)日： 2014-01-14
- 发明人: Sung-Ho Kim
- 申请人： Sung-Ho Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2011-0106425 20111018
- 主分类号： H03K3/00
- IPC分类号： H03K3/00
摘要：
A level shifting circuit includes an inverter inverting an input voltage of an input node and driving a first voltage of a first node, a first output driving unit driving an output voltage of an output node to a first level in response to the first voltage of the first node, a first connection unit electrically coupling the first node to a second node or electrically isolating the first node from the second node in response to the first voltage of the first node, an internal driving unit driving a second voltage of the second node to a second level in response to the input voltage of the input node and the output voltage of the output node, and a second output driving unit driving the output voltage of the output node to the second level in response to the second voltage of the second node.
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