发明授权
- 专利标题： Multilevel resistive memory having large storage capacity
- 专利标题（中）： 具有大存储容量的多电阻电阻存储器
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申请号： US13513155申请日： 2012-02-08
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公开(公告)号： US08633465B2公开(公告)日： 2014-01-21
- 发明人: Ru Huang , Gengyu Yang , Yimao Cai , Yu Tang , Lijie Zhang , Yue Pan , Shenghu Tan , Yinglong Huang
- 申请人： Ru Huang , Gengyu Yang , Yimao Cai , Yu Tang , Lijie Zhang , Yue Pan , Shenghu Tan , Yinglong Huang
- 申请人地址： CN Beijing
- 专利权人： Peking University
- 当前专利权人： Peking University
- 当前专利权人地址： CN Beijing
- 代理机构： DLA Piper LLP US
- 优先权： CN201110274869 20110916
- 国际申请： PCT/CN2012/070952 WO 20120208
- 国际公布： WO2013/037195 WO 20130321
- 主分类号： H01L47/00
- IPC分类号： H01L47/00
摘要：
The present invention discloses a multilevel resistive memory having large storage capacity, which belongs to a field of a fabrication technology of a resistive memory. The resistive memory includes an top electrode and a bottom electrode, and a combination of a plurality of switching layers and defective layers interposed between the top electrode and the bottom electrode, wherein, the top electrode and the bottom electrode are respectively contacted with a switching layer (a film such as Ta2O5, TiO2, HfO2), and the defective layers (metal film such as Ti, Au, Ag) are interposed between the switching layers. By using the present invention, a storage capacity of a resistive memory can be increased.
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