发明授权
- 专利标题： Semiconductor device and process for production thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13819352申请日： 2011-08-26
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公开(公告)号： US08633481B2公开(公告)日： 2014-01-21
- 发明人: Jun Nishimura , Yukinobu Nakata , Yoshihito Hara
- 申请人： Jun Nishimura , Yukinobu Nakata , Yoshihito Hara
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Keating & Bennett, LLP
- 优先权： JP2010-192500 20100830
- 国际申请： PCT/JP2011/069266 WO 20110826
- 国际公布： WO2012/029644 WO 20120308
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/12
摘要：
A semiconductor device (1000) includes a thin film transistor having a gate line (3a), source and drain lines (13as, 13ad), and an island-like oxide semiconductor layer (7), and a capacitor element (105) having a first electrode (3b) formed from the same conductive film as the gate line (3s), a second electrode (13b) formed from the same conductive film as the source line (13as), and a dielectric layer positioned between the first electrode and the second electrode. A gate insulating film (5) has a layered structure including a first insulating layer (5A) containing an oxide and a second insulating layer (5B) disposed on the side closer to the gate electrode closer than the first insulating film and having a higher dielectric constant than the first insulating film, the layered structure being in contact with the oxide semiconductor layer (7). The dielectric layer includes the second insulating film (5B) but does not include the first insulating film (5A). Accordingly, the deterioration of the oxide semiconductor layer due to oxygen deficiency can be suppressed without reducing the capacitance value of the capacitor element).
公开/授权文献
- US20130153904A1 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF 公开/授权日：2013-06-20