发明授权
US08633537B2 Memory transistor with multiple charge storing layers and a high work function gate electrode
有权
具有多个电荷存储层和高功函数栅电极的存储晶体管
- 专利标题： Memory transistor with multiple charge storing layers and a high work function gate electrode
- 专利标题（中）： 具有多个电荷存储层和高功函数栅电极的存储晶体管
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申请号： US13539466申请日： 2012-07-01
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公开(公告)号： US08633537B2公开(公告)日： 2014-01-21
- 发明人: Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar
- 申请人： Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A semiconductor devices including non-volatile memories and methods of fabricating the same to improve performance thereof are provided. Generally, the device includes a memory transistor comprising a polysilicon channel region electrically connecting a source region and a drain region formed in a substrate, an oxide-nitride-nitride-oxide (ONNO) stack disposed above the channel region, and a high work function gate electrode formed over a surface of the ONNO stack. In one embodiment the ONNO stack includes a multi-layer charge-trapping region including an oxygen-rich first nitride layer and an oxygen-lean second nitride layer disposed above the first nitride layer. Other embodiments are also disclosed.
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