发明授权
- 专利标题: Semiconductor device and a method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US13840625申请日: 2013-03-15
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公开(公告)号: US08633603B2公开(公告)日: 2014-01-21
- 发明人: Masami Koketsu , Toshiaki Sawada
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2008-032666 20080214
- 主分类号: H01L23/544
- IPC分类号: H01L23/544
摘要:
In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern P1a is formed in the same layer as that of a second layer wiring and the pattern Pib is formed in the same layer as that of a first layer wiring. Further, the pattern P2 is formed in the same layer as that of a gate electrode, and the pattern P3 is formed in the same layer as that of an element isolation region.
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