Invention Grant
- Patent Title: Programming method for non-volatile memory device
- Patent Title (中): 非易失性存储器件的编程方法
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Application No.: US13169079Application Date: 2011-06-27
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Publication No.: US08634249B2Publication Date: 2014-01-21
- Inventor: Seung-Jin Yang
- Applicant: Seung-Jin Yang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0095371 20100930
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method of programming a nonvolatile memory device comprises applying positive pulses and negative pulses simultaneously to a memory cell array to program at least one memory cell included in the memory cell array.
Public/Granted literature
- US20120081969A1 PROGRAMMING METHOD FOR NON-VOLATILE MEMORY DEVICE Public/Granted day:2012-04-05
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