发明授权
US08634257B2 Semiconductor storage device with memory cell utilized as a set-dedicated memory cell
有权
具有用作集合专用存储单元的存储器单元的半导体存储器件
- 专利标题： Semiconductor storage device with memory cell utilized as a set-dedicated memory cell
- 专利标题（中）： 具有用作集合专用存储单元的存储器单元的半导体存储器件
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申请号： US13466866申请日： 2012-05-08
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公开(公告)号： US08634257B2公开(公告)日： 2014-01-21
- 发明人: Satoru Hanzawa , Hiroyuki Minemura
- 申请人： Satoru Hanzawa , Hiroyuki Minemura
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2011-105113 20110510
- 主分类号： G11C7/22
- IPC分类号： G11C7/22
摘要：
A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than a semiconductor layer to which the first current was applied.
公开/授权文献
- US20120287697A1 SEMICONDUCTOR STORAGE DEVICE 公开/授权日：2012-11-15
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