发明授权
- 专利标题： Semiconductor storage device
- 专利标题（中）： 半导体存储设备
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申请号： US13524271申请日： 2012-06-15
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公开(公告)号： US08634557B2公开(公告)日： 2014-01-21
- 发明人: Yuji Nagai , Toshihiro Suzuki , Noboru Shibata , Taku Kato , Tatsuyuki Matsushita
- 申请人： Yuji Nagai , Toshihiro Suzuki , Noboru Shibata , Taku Kato , Tatsuyuki Matsushita
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H04K1/00
- IPC分类号： H04K1/00
摘要：
According to one embodiment, a device includes a storage and an authenticator. The storage includes a first area, a second area and a third area. The first area stores NKey and SecretID, the second area stores index information. E-SecretID is generated by SecretID. The third area stores FKB including information generated by FKey. The authenticator authenticates the external device. HKey is generated by an AES encryption calculating using NKey and HC. A SKey is generated by an AES encryption process using HKey and RN. A one-way conversion calculating is performed. E-SecretID, FKB and Oneway-ID are output to the external device. The index information is read from the second area.
公开/授权文献
- US20130142333A1 SEMICONDUCTOR STORAGE DEVICE 公开/授权日：2013-06-06
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