发明授权
US08637413B2 Nonvolatile resistive memory element with a passivated switching layer
有权
具有钝化开关层的非易失性电阻性存储元件
- 专利标题： Nonvolatile resistive memory element with a passivated switching layer
- 专利标题（中）： 具有钝化开关层的非易失性电阻性存储元件
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申请号： US13309813申请日： 2011-12-02
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公开(公告)号： US08637413B2公开(公告)日： 2014-01-28
- 发明人: Charlene Chen , Dipankar Pramanik
- 申请人： Charlene Chen , Dipankar Pramanik
- 申请人地址： US CA Milpitas JP Tokyo
- 专利权人： Sandisk 3D LLC,Kabushiki Kaisha Toshiba
- 当前专利权人： Sandisk 3D LLC,Kabushiki Kaisha Toshiba
- 当前专利权人地址： US CA Milpitas JP Tokyo
- 代理机构： Vierra Magen Marcus LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L29/00 ; G11C11/00
摘要：
A nonvolatile resistive memory element has a novel variable resistance layer that is passivated with non-metallic dopant atoms, such as nitrogen, either during or after deposition of the switching layer. The presence of the non-metallic dopant atoms in the variable resistance layer enables the switching layer to operate with reduced switching current while maintaining improved data retention properties.
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